Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka 567, Japan Received 1 August 1985 accepted for publication 15 November 1985 Valence-band-edge energies (Ev) are computed for I I I - I I I - I I I - V and I I I - V - V - V quaternary (pseudo-ternary) alloys using a random bond-orbital model (RBOM). Research Center, Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan and Shun-ichi GONDA Surface Science 174 (1986) 337-342 North-Holland, Amsterdamī A N D O F F S E T S AT P S E U D O - T E R N A R Y SEMICONDUCTOR-ALLOY CV profiles indicate an electron accumulation layer at the n-s.i.I n G a A s / I n P interface which develops into a two-dimensional electron gas at lower temperatures (Shubnikov-de Haas oscillations). The results show a large scatter in interface properties across a wafer. Measurements on n-s.i.-heterojunctions were analysed by Rhoderick's method. Measurements on p-p-heterojunctions indicate a valence band offset of /rE v = 0 eV.
Philips Research Laboratories, 5600 MD Eindhoven, The Netherlands Received 1 August 1985 accepted for publication 12 November 1985 Our investigations on LPE grown p-p- and n-s.i.-Ino.53Gao.47As/InP heterointerfaces by means of CV profiling and magnetoresistivity measurements are presented.
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